Electronics Letters · 1982 · 24 citations · 6 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesEtching ProcessesLaser DiodesLaser OpticsLaser PhysicsLaser Surface ProcessingSemiconductor LasersEtch Mask FabricationEtching MasksLow-threshold Current LasersSemiconductor Laser FabricationSingle-mode OperationWet Chemical EtchingWet Etching
A short-cavity (GaAl)As stripe geometry laser with a threshold current of 30 mA has been fabricated by a new chemical etch process which uses a multilayer metal mask. The laser is 23 μm long and 12 μm wide, and does not have reflective coatings on the etched facets. Quasi-single-mode operation is obtained in pulsed conditions.
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