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Organosilicon monomers for plasma-developed x-ray resists
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1981
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X-ray CrystallographyX-ray SpectroscopyEngineeringPolymer NanotechnologyResponsive PolymersChemistryPlasma ProcessingPolymersChemical EngineeringPolymer TechnologyPolymer ProcessingPolymer ChemistryMaterials SciencePolymer EngineeringPlasma EtchingCrystallographyOrganosilicon MonomersParts Bis-acryloxybutyltetramethyldisiloxaneMicrofabricationNatural SciencesPolymer ScienceX-ray DiffractionPolymer CharacterizationX-ray LithographySilicon-containing Monomers
A variety of silicon-containing monomers for plasma-developed resists formulated with chlorine-containing host polymers have been prepared and evaluated for use with x-ray lithography. The major design problems encountered were monomer incompatibility, high volatility, and low reactivity. One class of monomers, the bis-acryloxy- and and methacryloxyalkyltetramethyldisiloxanes, satisfies all requirements. A formulation with optimum properties contains 90 parts poly(2,3-dichloro-1-propyl acrylate) (DCPA) and 10 parts bis-acryloxybutyltetramethyldisiloxane (BABTDS). It is very sensitive (30–60 s exposure time), has high resolution (better than 0.5 μm), and can be developed by reactive ion etching which provides extremely uniform developed patterns.