Applied Physics Letters · 1997 · 26 citations · 8 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsOptoelectronicsSemiconductor MaterialsElectron Spin Resonance SpectroscopyElectronic Band StructureOptical Properties Of SemiconductorsSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor PhysicsConduction BandEpitaxial MaterialsHigh-frequency Electron Spin ResonanceMolecular Beam EpitaxySemiconductor Characterization
The conduction band electron properties in ZnSe epitaxial layers on GaAs grown by molecular beam epitaxy are determined by far-infrared optically detected cyclotron resonance experiments. The high ωτ-value (in excess of 800) allows the observation of the spin splitting of the cyclotron resonance. The splitting is 8 mT in agreement with theoretical predictions.
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Degradation of II-VI based blue-green light emitters
Supratik Guha, J. M. DePuydt, M. A. Haase et al. · Applied Physics Letters · 1993 · 224 citations
Non-parabolicity and anisotropy in the conduction band of GaAs
H. Sigg, J.A.A.J. Perenboom, P. Pfeffer et al. · Solid State Communications · 1987 · 65 citations