Applied Physics Letters · 1967 · 33 citations · 1 references
Natural SciencesMaterials EngineeringMaterials ScienceInterface ScienceSemiconductor MaterialsSurface ScienceCrystal GrowthEpitaxial GrowthSemiconductor InterfacesSemiconductor SurfacesSurface CrystallographySurface PhysicsCrystallographic OrientationCrystallographic Preferred OrientationFilm Growth MechanismsHeat Treatment EffectsInterface FormationPreferred OrientationSemiconductor CrystallographyThin-film Growth Mechanisms
The oriented growth of the interfacial PtSi layer between Pt and Si is described. Sputtered Pt onto the (111) Si wafer reacts with Si above 600°C to form PtSi. The interfacial PtSi has the preferred orientation characteristic of the temperature of heat treatment, varying the orientation from [101] at 600°C and 700°C, through [121] at 750°C, to [001] at 800°C. A possible growth mechanism of the interfacial PtSi is proposed on the basis of the atomic layer sequence of each crystallographic direction.
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M.P. Lepselter · Bell System Technical Journal · 1966 · 161 citations
Engineering, Electrical Engineering, Materials Engineering +13