Extended wavelength SWIR InGaAs focal plane array: Characteristics and limitations

Tunneling and 1/<i>f</i> noise currents in HgCdTe photodiodes

Y. Nemirovsky, A. Unikovsky · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1992 · 68 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Dark current analysis and characterization of In/sub x/Ga/sub 1-x/As/InAs/sub y/P/sub 1-y/ graded photodiodes with x&amp;lt;0.53 for response to longer wavelengths (&amp;lt;1.7 mu m)

Krishna Linga, G.H. Olsen, Vladimir S. Ban et al. · Journal of Lightwave Technology · 1992 · 66 citations

Engineering, Electrical Engineering, Materials Science +13

2.6 μm InGaAs photodiodes

Ramon U. Martinelli, T.J. Zamerowski, P. A. Longeway · Applied Physics Letters · 1988 · 58 citations

Engineering, Electrical Engineering, Materials Science +17

Deep-level traps induced dark currents in extended wavelength InxGa1−xAs/InP photodetector

Xiaoli Ji, Baiqing Liu, Yue Xu et al. · Journal of Applied Physics · 2013 · 54 citations

Engineering, Electrical Engineering, Materials Science +14

Distinction investigation of InGaAs photodetectors cutoff at 2.9μm

Cheng Li, Yonggang Zhang, Kai Wang et al. · Infrared Physics & Technology · 2009 · 38 citations

Engineering, Electrical Engineering, Materials Science +14