A study of novel growth approaches to influence the growth mechanism and interface quality in heterostructures grown by molecular beam epitaxy

Abstract

An atomic model based on Monte Carlo techniques is discussed and motivations are presented for the need of novel growth approaches for growth of high quality heterostructures. These motivations arise from recognizing the differences in cation kinetics of the two semiconductor components of the heterostructure, which may not allow high quality growth of both the components at the same temperature. Results of computer simulations on two approaches to overcome this problem are reported. The two approaches are (a) use of periodic substrate temperature pulses during growth and (b) growth interruption. Based on our simulations we propose that high quality heterostructures can be grown at low average temperature provided the substrate temperature is periodically raised for a few seconds without growth interruption.