Neutralization of electrically active aluminum in recrystallized silicon-on-sapphire films

Substrate-orientation dependence of the epitaxial regrowth rate from Si-implanted amorphous Si

L. Csepregi, Eamonn Kennedy, J. W. Mayer et al. · Journal of Applied Physics · 1978 · 585 citations

Natural Sciences, Materials Engineering, Materials Science +17

DIffusion in Semiconductors

Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum · 1970 · 271 citations

The stopping and ranges of ions in matter

M.M.R. Williams · Annals of Nuclear Energy · 1978 · 180 citations

Natural Sciences, Physics, Atomic Physics +9

Properties of elemental and compound semiconductors

Journal of the Franklin Institute · 1960 · 151 citations

Engineering, Materials Science, Physics +12

Improvement of crystalline quality of epitaxial Si layers by ion-implantation techniques

S.S. Lau, S. Matteson, J. W. Mayer et al. · Applied Physics Letters · 1979 · 115 citations

Engineering, Materials Engineering, Materials Science +17