CdTe–InSb heterojunctions

Abstract

An investigation is made of the properties of the contact CdTe–InSb realized by deposition of InSb on the etched surface of n-type CdTe single crystals and annealing. The profile of the elemental composition of the contact obtained by secondary ion mass spectrometry (SIMS) shows that certain interfacial chemical reactions do occur. The results obtained from the measurements of the photoresponse and forward characteristics versus temperature shows that near room temperature, the contact behaves like a „real”︁ Schottky barrier. At low temperature a tunneling transport mechanism appears.