Semiconductor Science and Technology · 1987 · 32 citations · 23 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsMaterials CharacterizationSemiconductor MaterialsElectronic Band StructureQuantum WellsSemiconductor Crystal GrowthSemiconductor HeterostructuresSemiconductor PhysicsX-ray CrystallographyMolecular Beam EpitaxyPhotoluminescencePhotoluminescence In Quantum WellsPhotoluminescence SpectroscopyQuantum Well GrowthQuantum Well StructuresWell Depth EffectsX-ray Diffraction Analysis
Multi-quantum-well (MQW) structures can be regarded as new materials whose properties are determined by the well and barrier thicknesses Lz and LB and the well depth (which is composition dependent). Measurements of Lz, LB and x are reported for 16 MQW samples grown by molecular beam epitaxy in the AlxGa1-xAs system. Results from X-ray diffraction, photoluminescence excitation spectroscopy and transmission electron microscopy are found to compare well with each other and with values predicted from MBE growth conditions.
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<i>International Tables for X-ray Crystallography</i>
Acta Crystallographica Section B · 1976 · 14.2K citations · Full text
Dynamics of film growth of GaAs by MBE from Rheed observations
J.H. Neave, B.A. Joyce, Peter J. Dobson et al. · Applied Physics A · 1983 · 958 citations
Natural Sciences, Materials Engineering, Materials Science +14
Electronmicroscopy and Analysis-1981
Solar Energy · 1984 · 817 citations