An extended and unified solution for the semiconductor surface problem at equilibrium

Abstract

An equilibrium solution is presented for the semiconductor surface in terms of the potential, electric field, charge density, and change in mobile-carrier concentrations throughout the semiconductor as a function of the surface potential and bulk doping. These results are an extension of the work initiated by R. H. Kingston and S. F. Neustadter [J. Appl. Phys. 26, 718 (1955)]; and extended by C. E. Young [J. Appl. Phys. 32, 329 (1961)]. The present results cover a wider range of all the parameters involved in the problem; also, through quantities chosen for normalization and through choice of origin, the present results remove a considerable redundancy existing in the previous data. Finally, the identity of the equilibrium surface problem and the equilibrium step-junction problem is demonstrated and explained.