IEEE Electron Device Letters · 2012 · 13 citations · 10 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesComplementary Metal-oxide-semiconductor TechnologyDevice CharacterizationMetal-oxide-semiconductor Field-effect TransistorsNoise In Electronic DevicesNoise In Semiconductor DevicesQuantum TunnelingCompressive StrainInterface Trap DensityNoise In Metal-oxide-semiconductor Field-effect TransistorsNoise ParametersRandom Telegraph NoiseStrain EffectsValence BandValence Band Structure
The random telegraph noise (RTN) characteristics of 28-nm pMOSFETs with tip-shaped SiGe source/drain have been investigated. RTN analysis found that strained devices undergo higher compressive strain; the trap position from the Si/SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> interface is reduced, because of the closer trap energy level near the valence band. Although tip-shaped SiGe process induces higher oxide trap density, the trap position corresponding to the tunneling attenuation length (λ) may result in lower 1/ <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">f</i> noise level in tip-shaped SiGe S/D devices as compared with that of control devices.
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Random telegraph noise of deep-submicrometer MOSFETs
Kuo-Hsiang Hung, P.K. Ko, Chenming Hu et al. · IEEE Electron Device Letters · 1990 · 309 citations
Engineering, Electrical Engineering, Electronic Materials +16