Journal of The Electrochemical Society · 1992 · 28 citations · 0 references
EngineeringMaterials EngineeringMaterials ScienceSemiconductor MaterialsSurface ScienceThin FilmsEtching ProcessesSemiconductor Device MaterialsSemiconductor SurfacesSemiconductor Thin FilmsSilicon MaterialsThin Film EtchingEtch MechanismsEtchingFailure Mode AssessmentFailure Mode InvestigationNitride Thin FilmsSilicon DioxideSilicon NitrideSilicon Passivation
The etch rates of plasma‐deposited silicon nitride and silicon oxynitride films in condensed water were studied as a function of water temperature, pH of the solution, and film composition. The etch rates for all films at water temperatures between 50 and 125°C were between 0.2 and 10.0 nm/h. The activation energies were between 0.6 and 1.0 eV. Where water condensation on devices is possible, water etching of the passivation should be considered as a potential failure mode.