Grain growth in boron doped LPCVD polysilicon films

Grain Growth Mechanism of Heavily Phosphorus‐Implanted Polycrystalline Silicon

Yasuo Wada, Shigeru Nishimatsu · Journal of The Electrochemical Society · 1978 · 246 citations

Engineering, Materials Engineering, Materials Science +17

Si / SiO2 Interface Oxidation Kinetics: A Physical Model for the Influence of High Substrate Doping Levels: I . Theory

Chu Po Ho, J. D. Plummer · Journal of The Electrochemical Society · 1979 · 120 citations

Engineering, Materials Engineering, Materials Science +17

Grain‐Growth Mechanisms in Polysilicon

Len Mei, Michel Rivier, Young Kwark et al. · Journal of The Electrochemical Society · 1982 · 79 citations

Engineering, Electrical Engineering, Materials Science +17

Velocity and electronic state distributions of sputtered Fe atoms by laser-induced fluorescence spectroscopy

C. E. Young, W. F. Calaway, Michael J. Pellin et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1984 · 61 citations · Full text

Natural Sciences, Materials Science, Physics +17

Resistivity changes of heavily-boron-doped CVD-prepared polycrystalline silicon caused by thermal annealing

Takahiro Makino, Hiroaki Nakamura · Solid-State Electronics · 1981 · 47 citations

Engineering, Materials Engineering, Materials Science +14