TEM Observation of Defects Induced by Cu Contamination on Si(100) Surface

Abstract

The behavior of a Si(100) surface defect induced by intentional Cu contamination was studied with transmission electron microscopy. After annealing at 1150°C for 1 hour in N 2 atmosphere, colony precipitates lying along (110) planes were observed only on the surface of the wafer. These precipitates were estimated to be Cu 6 Si-type silicides by the selected area diffraction pattern. During additional annealing in an oxidation atmosphere, stacking faults were formed from each of colony precipitates. This indicated that colony precipitates were the nucleus of oxidation-induced stacking faults.