Laser Physics · 2010 · 36 citations · 17 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor MaterialsLaser Host MaterialsLaser OpticsLaser PhysicsOptical SourcesRare-earth-doped MaterialsSemiconductor LasersGainLaser Gain MediaMaximum OutputMaximum Power OutputMode-locked LasersOptical Frequency ConversionPower OutputSolid-state Lasers
A diode-pumped passively mode-locked low-doped Nd:YVO 4 green laser with a semiconductor saturable absorber mirror (SESAM) and an intracavity frequency-doubling KTP crystal is demonstrated. In order to efficiently release the thermal effect, a low-doped Nd:YVO 4 crystal with the Nd 3+ concentration of 0.1 at % is employed as the gain medium. The maximum average output power of 3.1 W at 532 nm with a repetition rate of 102 MHz is obtained under the pump power of 25 W, corresponding to an optical conversion efficiency of 12.4%. The 532 nm mode locked pulse width is estimated to be approximately 6.1 ps.
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