Observations of defects in LPE GaAs revealed by new chemical etchant

Defects in epitaxial multilayers

J. W. Matthews, A. E. Blakeslee · Journal of Crystal Growth · 1976 · 593 citations

Engineering, Epitaxial Multilayers, Applied Physics +4

Etching of Dislocations on the Low-Index Faces of GaAs

M. S. Abrahams, C. J. Buiocchi · Journal of Applied Physics · 1965 · 338 citations

Semiconductors, Materials Science, Engineering +14

Nearly perfect crystal growth of III–V compounds by the temperature difference method under controlled vapour pressure

Jun‐ichi Nishizawa, Yasuo Okuno, H. Tadano · Journal of Crystal Growth · 1975 · 94 citations

Materials Science, Temperature Difference Method, Perfect Crystal Growth +9

Liquid phase epitaxy of GaP by a temperature difference method under controlled vapor pressure

Jun‐ichi Nishizawa, Yasuo Okuno · IEEE Transactions on Electron Devices · 1975 · 74 citations

Materials Engineering, Materials Science, Temperature Difference Method +14

Selective Photoetching of Gallium Arsenide

F. Kuhn-Kuhnenfeld · Journal of The Electrochemical Society · 1972 · 72 citations

Engineering, Semiconductor Materials, Optoelectronic Devices +22