Low threshold half-wave vertical-cavity lasers

Diana L. Huffaker, Jae Gyun Shin, D.G. Deppe

Electronics Letters · 1994 · 110 citations · 5 references

Concepts

Abstract

Data are presented characterising half-wavelength vertical-cavity surface-emitting lasers defined by a native-oxide ring in which the native oxide is 200 Å from the single quantum well. The lowest threshold is achieved with a 2 µm square active region, with a minimum threshold current of 91 µA continuous-wave at room temperature.

References

5