Refractive indices of InGaAlAs grown by molecular beam epitaxy

Abstract

The accurate determination of the refractive indices of InGaAlAs, grown by molecular beam epitaxy, is reported for the first time. The method used, modal, cutoff spectroscopy, is applied to InGaAlAs/InP single heterostructure waveguides, with compositions corresponding to band-gap wavelengths in the range of 1.02–1.12 μm. The refractive indices are determined at different wavelengths between 1.1 and 1.6 μm, with an accuracy better than 10−3.