Low-voltage InAsP/InAs HBT and metamorphic InAs BJT devices grown by molecular beam epitaxy

References

Page 1

	Year	Citations
Band lineups and deformation potentials in the model-solid theory Chris G. Van de Walle Physical review. B, Condensed matter EngineeringElectronic PropertiesElectronic StructureSemiconductor NanostructuresSemiconductors	1989	2.2K
Theoretical study of band offsets at semiconductor interfaces Chris G. Van de Walle, Richard M. Martin Physical review. B, Condensed matter SemiconductorsMaterials ScienceElectrical EngineeringEngineeringPhysics	1987	687
Heterojunction band offsets and effective masses in III-V quaternary alloys M. P. C. M. Krijn Semiconductor Science and Technology Materials ScienceMaterials EngineeringBand Gap DifferencesIi-vi SemiconductorEngineering	1991	438
GaAsGaAlAs heterojunction transistor for high frequency operation W. P. Dumke, J. M. Woodall, V.L. Rideout Solid-State Electronics	1972	80
Electrical behavior of an NPN GaAlAs/GaAs heterojunction transistor A. Marty, G. Rey, J.P. Bailbé Solid-State Electronics Electrical EngineeringEngineeringElectrical BehaviorApplied PhysicsSemiconductor Device	1979	56
InGaAs/InP double-heterostructure bipolar transistors with near-ideal β versus I<sub>C</sub>characteristic R.N. Nottenburg, H. Temkin, M. B. Panish, IEEE Electron Device Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringApplied Physics	1986	54
Metamorphic InP/InGaAs double-heterojunction bipolar transistors on GaAs grown by molecular-beam epitaxy Haitao Zheng, K. Radhakrishnan, H. Wang, Applied Physics Letters Semiconductor TechnologyElectrical EngineeringEngineeringMolecular-beam EpitaxyStrain Relaxation	2000	49
Metamorphic heterojunction bipolar transistors and P–I–N photodiodes on GaAs substrates prepared by molecular beam epitaxy W. E. Hoke, P. J. Lemonias, T. D. Kennedy, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Wide-bandgap SemiconductorEngineeringSemiconductor MaterialsOptoelectronic DevicesIntegrated Circuits	2001	23
Molecular-beam epitaxial group III arsenide alloys: Effect of substrate temperature on composition C. E. C. Wood, D. V. Morgan, L. Rathbun Journal of Applied Physics Materials EngineeringMaterials ScienceIon DechannelingIi-vi SemiconductorGrowth Temperature	1982	22
Molecular beam epitaxy of heterostructures on metamorphic AlxGayIn1 − x − yAs buffer layers Matthias Haupt, K. Köhler, P. Ganser, Journal of Crystal Growth PhysicsApplied PhysicsMultilayer HeterostructuresMolecular Beam EpitaxyEpitaxial Growth	1997	19

Page 1