Low-voltage InAsP/InAs HBT and metamorphic InAs BJT devices grown by molecular beam epitaxy

Band lineups and deformation potentials in the model-solid theory

Chris G. Van de Walle · Physical review. B, Condensed matter · 1989 · 2.2K citations

Engineering, Electronic Properties, Electronic Structure +16

Theoretical study of band offsets at semiconductor interfaces

Chris G. Van de Walle, Richard M. Martin · Physical review. B, Condensed matter · 1987 · 687 citations

Semiconductors, Materials Science, Electrical Engineering +15

Heterojunction band offsets and effective masses in III-V quaternary alloys

M. P. C. M. Krijn · Semiconductor Science and Technology · 1991 · 438 citations

Materials Science, Materials Engineering, Band Gap Differences +12

GaAsGaAlAs heterojunction transistor for high frequency operation

W. P. Dumke, J. M. Woodall, V.L. Rideout · Solid-State Electronics · 1972 · 80 citations

Electrical behavior of an NPN GaAlAs/GaAs heterojunction transistor

A. Marty, G. Rey, J.P. Bailbé · Solid-State Electronics · 1979 · 56 citations

Electrical Engineering, Engineering, Electrical Behavior +2