VPE Growth of n ‐ AlAs on GaAs for Heterojunction Devices

Abstract

Vapor phase epitaxial growth of on Zn‐doped substrates by chloride transport in an all‐alumina reactor yields useful heterojunction material. Smooth, planar interfaces and gently hummocked top surfaces have been obtained. The heterojunctions are found to be abrupt, both metallurgically and electrically, and have been used to demonstrate large area, high efficiency solar cells. The utility of Mn and Be as p‐type dopants for vapor phase growth has been explored, without success.