Epitaxy of Ce and Ce oxides on V(110)

Abstract

Epitaxial Ce layers have been obtained by evaporation on a V(110) surface. The Ce phase reported some years ago for this system is not confirmed in our experiments: the analysis of reflection high-energy electron-diffraction and x-ray-photoemission data leads us to identify the epitaxial Ce phase with a Ce-\ensuremath{\gamma} phase. Under several circumstances, epitaxy of Ce oxides has been observed on V(110): in these cases, the epitaxial surface lattice is found to be hexagonal with a parameter ${\mathit{a}}_{\mathit{s}}$=3.9\ifmmode\pm\else\textpm\fi{}0.1 \AA{}, and does not depend (in the limit of experimental errors) on the amount of oxygen.