Surface-electronic structure of α-like Ce compounds

Abstract

Photoemission studies with varying degrees of surface sensitivity are reported for the Ce 3d core-level and Ce 4f valence-band regions of the \ensuremath{\alpha}-like Ce compounds ${\mathrm{CeIr}}_{2}$, ${\mathrm{CePd}}_{3}$, and ${\mathrm{CeRh}}_{3}$. In all cases studied, strong changes of the 4f electronic structure at the surface towards a more localized \ensuremath{\gamma}-like behavior are observed, requiring a reanalysis of previously reported photoemission spectra of \ensuremath{\alpha}-like Ce compounds. Implications for an improved understanding of the surface-catalytic properties of Ce systems, as well as of the surface-electronic structure of narrow-band materials, are pointed out.