Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1984 · 12 citations · 0 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsEpitaxial GrowthSemiconductor Crystal GrowthSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesSemiconductor Thin FilmsEpitaxial Film GrowthEpitaxial Film MorphologyEpitaxial Growth KineticsEpitaxial Thin-film GrowthFilm Growth MechanismsMolecular Beam Epitaxy
Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation R. N. Bicknell, N. C. Giles‐Taylor, R. W. Yanka, J. F. Schetzina, T. J. Magee, C. Leung, H. Kawayoski, G. R. Woolhouse; Summary Abstract: Growth of high quality (100)CdTe films on (100)GaAs substrates by molecular beam epitaxy. J. Vac. Sci. Technol. B 1 July 1984; 2 (3): 417–418. https://doi.org/10.1116/1.582886 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAVS: Science & Technology of Materials Interfaces and ProcessingJournal of Vacuum Science & Technology B Search Advanced Search |Citation Search