Practical approach to ion track energy distribution

Abstract

A practical approach to the problem of ion track radial energy distribution has been developed in a computer calculation. This approach uses an existing theory that analytically describes the spatial energy deposition by delta rays. The results agree favorably with a Monte Carlo calculation that is more realistic but much less practical. Several cases of incident ions in silicon have been calculated and results presented. The information is useful as input to problems requiring initial track structure for charge transport in semiconductor applications.