IEEE Transactions on Nuclear Science · 1987 · 69 citations · 8 references
EngineeringElectrical EngineeringPhysicsMicroelectronicsNuclear PhysicsSemiconductor DevicesHeavy-ion PhysicsMonte Carlo Radiation TransportMonte Carlo Transport MethodsHeavy Ion Track StructureMonte Carlo Track SimulationsRadiation EffectsRadiation-hardened Memory DevicesSatellite CellsSingle Event Upset ModelingSize Effect ModelingTrack Structure Simulation
Double-bit upset rates in satellite memory cells as high as several percent of total upsets have recently been reported. This significant fraction may be explained by cosmic ion track sizes which are larger than previously postulated. Generation and transport of high-energy secondary electrons along heavy-ion tracks have been analyzed using the Monte Carlo (MC) code TRIPOS-E. Indications are that initial track radii are significantly larger than previously thought. In this paper, an evaluation of the probability of double-bit upsets as a function of track size and hypothetical device dimensions is presented.
8