Publication | Closed Access
The Size Effect of Ion Charge Tracks on Single Event Multiple-Bit Upset
69
Citations
8
References
1987
Year
Electrical EngineeringMemory ArchitectureEngineeringPhysicsMonte CarloApplied PhysicsSize EffectComputer EngineeringSingle Event EffectsDouble-bit Upset RatesCosmic RayIon BeamSemiconductor MemoryHigh-energy Cosmic RayMicroelectronicsIon ProcessIon Charge TracksTrack Size
Double-bit upset rates in satellite memory cells as high as several percent of total upsets have recently been reported. This significant fraction may be explained by cosmic ion track sizes which are larger than previously postulated. Generation and transport of high-energy secondary electrons along heavy-ion tracks have been analyzed using the Monte Carlo (MC) code TRIPOS-E. Indications are that initial track radii are significantly larger than previously thought. In this paper, an evaluation of the probability of double-bit upsets as a function of track size and hypothetical device dimensions is presented.
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