Journal of Microelectromechanical Systems · 2014 · 33 citations · 25 references
EngineeringElectrical EngineeringMicroelectromechanical SystemsMicroelectronicsMicrowave EngineeringDevice ReliabilityIntegrated Circuit DesignMems DesignMems ReliabilityMems SwitchesRf MemsInsertion LossIsolationIsolation LevelsMicroelectromechanical SwitchesRf Mems SwitchesRf Microelectromechanical SystemsRf SwitchesSilicon-on-insulator Technology
This paper presents extremely compact single-pole multiple-throw radio frequency (RF) microelectromechanical system switches, SP7T and SP11T, based on a symmetric circular switch topology. The switch dimensions are 0.61 mm ×0.61 mm, which is smaller than typical CMOS Si-on-insulator switches. The SP7T and SP11T switches, which are insensitive to stress gradient effects, achieve simulated contact and restoring forces of 0.3-0.4 mN (per a switch) at 90-100 V. The SP7T and SP11T switches also achieve isolation levels of 50-19 dB and 50-17 dB, respectively, and insertion loss of 0.3-1.2 dB and 0.3-1.7 dB, respectively, at 0.1-10 GHz. The measured ON-resistance is 4.5-2.5 Ω at 75-100 V, respectively, in an open environment and limited by contact contamination. The measured switching time is 7-10 μs. Cold-switched reliability tests of SP7T and SP11T switches show greater than 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">8</sup> Hz with an RF power of 0.1-1 W, which is sufficient power handling capability for 3G and 4G systems.
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The Search for a Reliable MEMS Switch
Gabriel M. Rebeiz, C. D. Patel, Seungoh Han et al. · IEEE Microwave Magazine · 2013 · 128 citations
Engineering, Electrical Engineering, Microelectromechanical Systems +16
A packaged, high-lifetime ohmic MEMS RF switch
S. B. Majumder, J. Lampen, Rebecca Morrison et al. · 2003 · 105 citations
Engineering, Electrical Engineering, Microelectromechanical Systems +16