Physical Review Letters · 1977 · 150 citations · 9 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsSemiconductor MaterialsSpectroscopyOptical Properties Of SemiconductorsSemiconductor PhysicsSilicon MaterialsExcitationExciton DissociationExciton PhysicsExcitonsMott TransitionSilicon Optical PropertiesSilicon Physics
Measurements of luminescence spectra in pure Si demonstrate the dissociation of excitons with increasing excitation intensity. The density at which the dissociation begins and its temperature variation agree well with Mott's predictions. We have also determined a phase diagram of Si, including the effects of electron-hole-liquid and Mott transition.
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