physica status solidi (a) · 1985 · 16 citations · 6 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsMaterials PhysicsDefects In Electronic MaterialsDislocation MechanicsElectronic Material CharacterizationPlastic DeformationSemiconductor PhysicsSilicon MaterialsDeformationDislocation BehaviorDislocation PhysicsFrequency-dependent ConductivityMagnetoresistanceSilicon AnnealingSilicon Electrical PropertiesStrain Effects
The effect of annealing on the high-frequency conductivity of plastically deformed silicon is studied. It is shown that after annealing the dislocation conduction in p-type samples disappears. This correlates with the disappearance of the EPR signal from dislocations and of some peaks in the DLTS spectra. The hydrogenation of samples gives rise to dislocation conduction which hypothetically is due to the one-dimensional bands caused by the deformation potential. Their depths are evaluated as Ec − 0.08 eV and Ev + 0.06 eV. The negative magnetoresistance observed at temperatures above 35 K is analyzed.
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On the Energy Spectrum of Dislocations in Silicon
V. V. Kveder, Yu. A. Osip’yan, W. Schröter et al. · physica status solidi (a) · 1982 · 158 citations