Gas source molecular beam epitaxy of GaInAs(P): Gas sources, single quantum wells, superlattice p-i-n's and bipolar transistors

Deep-level transient spectroscopy: A new method to characterize traps in semiconductors

D. V. Lang · Journal of Applied Physics · 1974 · 3.7K citations

Engineering, Electrical Engineering, Materials Science +16

Superlattice band structure in the envelope-function approximation

G. Bastard · Physical review. B, Condensed matter · 1981 · 1.3K citations

Natural Sciences, Materials Science, Physics +17

Crystal growth '78

I.J. Saunders · Physics Bulletin · 1979 · 369 citations

Natural Sciences, Materials Engineering, Materials Science +9

Chemical beam epitaxy of InP and GaAs

W. T. Tsang · Applied Physics Letters · 1984 · 255 citations

Engineering, Materials Engineering, Materials Science +17

Molecular Beam Epitaxy of GaAs and InP with Gas Sources for As and P

M. B. Panish · Journal of The Electrochemical Society · 1980 · 223 citations

Engineering, Materials Engineering, Materials Science +11