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Scaling properties and electromigration resistance of sputtered Ag metallization lines
118
Citations
11
References
2001
Year
EngineeringElectronic PackagingThin Film ProcessingMaterials EngineeringMaterials ScienceElectrical EngineeringElectromigration TechniqueAg LinesMetallurgical InteractionMicrostructured Ag LinesMicroelectronicsMicrostructureSpecific ResistanceMicrofabricationSurface ScienceApplied PhysicsMetallurgical ProcessElectromigration ResistanceThin FilmsMetallurgical SystemElectrical Insulation
Resistivity and electromigration were investigated for thin sputtered Ag films and microstructured Ag lines. Resistivities of thin films were found to be lower compared to copper and follow the prediction of the size effect. Microstructured Ag lines show a high electromigration resistance at accelerated stress measurements. Considering joule heating of the lines, the activation energy for electromigration was found to be 0.58 eV. The extrapolated median lifetime of Ag lines was found to be similar or higher than for Cu lines.
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