Concepedia

Argon ion damage in self-assembled quantum dots structures

Winston V. Schoenfeld, C.-H. Chen, P. M. Petroff, Evelyn L. Hu

Applied Physics Letters · 1998 · 39 citations · 19 references

Abstract

The effects of radiation damage exposure on InGaAs quantum wells and InAs quantum dots are compared using luminescence spectroscopy techniques. A large increase in the radiation resistance of the InAs quantum dots is observed and attributed to exciton localization in the quantum dots and a point defect strain gettering effect.

References

19

Ultranarrow Luminescence Lines from Single Quantum Dots

Marius Grundmann, J. Christen, N. N. Ledentsov et al. · Physical Review Letters · 1995 · 738 citations

Engineering, Materials Science, Condensed Matter Physics +16

Intermixing and shape changes during the formation of InAs self-assembled quantum dots

J. M. Garcı́a, G. Medeiros‐Ribeiro, K. Schmidt et al. · Applied Physics Letters · 1997 · 586 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Observation of Recombination-Enhanced Defect Reactions in Semiconductors

D. V. Lang, Lionel C. Kimerling · Physical Review Letters · 1974 · 293 citations

Engineering, Electrical Engineering, Materials Science +14

Shell structure and electron-electron interaction in self-assembled InAs quantum dots

Europhysics Letters (EPL) · 1996 · 250 citations · Full text

Natural Sciences, Materials Science, Physics +17

Trapping of photogenerated carriers by InAs quantum dots and persistent photoconductivity in novel GaAs/<i>n</i>-AlGaAs field-effect transistor structures

G. Yusa, H. Sakaki · Applied Physics Letters · 1997 · 214 citations

Engineering, Electrical Engineering, Materials Science +17