Electronics Letters · 1979 · 82 citations · 0 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationField-effect TransistorsIii-v SemiconductorsMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Device MaterialsDeep DepletionDepletion LayersDepletion-mode TransistorsEnhancement-mode TransistorsSaturation Current
A new gate structure is described for power thyristors which uses the m.o.s. field effect to control the anode breakover voltage. Experimental devices have been fabricated using a V-groove etched in (100) oriented wafers and forming the gate in these grooves. Both enhancement- and depletion-mode devices have been demonstrated.