SID Symposium Digest of Technical Papers · 2010 · 26 citations · 2 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsComplementary Metal-oxide-semiconductor TechnologyDisplay TechnologiesOrganic SemiconductorsOxide SemiconductorsSemiconductor Device MaterialsThin-film TransistorsHalogen LampsTransparent Conducting FilmsTransparent Conductive OxidesTransparent ElectronicsTransparent Thin-film TransistorsTransparent TransistorsWide-bandgap Oxides
Abstract We have fabricated 3.2″ QVGA transparent AMOLED by integrating photostable top gate IGZO TFT array and highly transparent OLED. The photostability of oxide TFT was investigated under constant gate bias and constant current CC stress to explore the possibility of OLED application. After 40 hours CC stress of 10 μA with halogen lamp illumination, the ΔV th was just − 0.22 V while that obtained under dark was + 0.1 V. with newly designed OLED cathode and transparent getter we increase OLED transmittance up to 80% with keeping resistance of cathode at 6 Ω;/□. Outdoor stability of OLED and oxide TFT make transparent AMOLED viable in the real market.
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