Applied Physics Letters · 1986 · 43 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCarrier TransportHigh-frequency Semiconductor DevicesQuantum TunnelingQuantum Well DevicesQuantum WellsSemiconductor PhysicsCarrier Transport In Quantum WellsCurrent-voltage CharacterizationDifferential ResistanceMetalorganic Chemical Vapor DepositionQuantum Well HeterostructuresQuantum Well StructuresResonant TunnelingTransport In Quantum Wells
Resonant tunneling transport was studied in GaAs-AlGaAs single well, double barrier structures. Negative differential resistance at 77 and 300 K was observed in devices grown by metalorganic chemical vapor deposition. The observed peak to valley ratios were 6 to 1 and 1.48 to 1, respectively. The presence of GaAs spacer layers was found to have a distinct effect on the 300 K current versus voltage characteristics. Microwave oscillation at frequencies up to 3.0 GHz was observed at 300 K. A short discussion of the oscillation frequency limits of our structure is presented.
8
Tunneling in a finite superlattice
Raphael Tsu, L. Esaki · Applied Physics Letters · 1973 · 2.4K citations
Resonant tunneling through quantum wells at frequencies up to 2.5 THz
T. C. L. G. Sollner, W. D. Goodhue, P. E. Tannenwald et al. · Applied Physics Letters · 1983 · 1.1K citations · Full text
T. C. L. G. Sollner, P. E. Tannenwald, D. D. Peck et al. · Applied Physics Letters · 1984 · 272 citations