Concepedia

Rutherford backscattering and secondary ion mass spectrometry studies of erbium implanted silicon

W. P. Gillin, Zhang Jingping, B.J. Sealy

Solid State Communications · 1991 · 13 citations · 3 references

DOI

Concepts

References

3

1.54-μm luminescence of erbium-implanted III-V semiconductors and silicon

H. Ennen, J. Schneider, Gernot S. Pomrenke et al. · Applied Physics Letters · 1983 · 566 citations

, , +15

1.54-μm electroluminescence of erbium-doped silicon grown by molecular beam epitaxy

H. Ennen, Gernot S. Pomrenke, A. Axmann et al. · Applied Physics Letters · 1985 · 347 citations

, , +17

Transient annealing for the production of n+ contact layers in GaAs

R. Gwilliam, R. Bensalem, B.J. Sealy et al. · Physica B+C · 1985 · 16 citations

, , +12