Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium · 2008 · 37 citations · 5 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesMicrowave Integrated CircuitsPower AmplifiersWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsBandwidthGallium Nitride Microwave Integrated CircuitsGallium Nitride Power AmplifiersGan-based High-frequency DevicesPower Amplifier DesignPower OutputSmall-signal GainWideband Amplifiers
The design and performance of a wideband power amplifier MMIC suitable for electronic warfare (EW) systems and other wide bandwidth applications is presented. The amplifier utilizes dual field plate 0.25-mum GaN on SiC device technology integrated into the three metal interconnect (3MI) process flow. Experimental results for the MMIC at 30V power supply operation demonstrate greater than 10 dB of small signal gain, 9 W to 15 W saturated output power and 20% to 38% peak power added efficiency over a 1.5 GHz to 17 GHz bandwidth.
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Multi-Watt Wideband MMICs in GaN and GaAs
D. E. Meharry, R. Lender, Kanin Chu et al. · IEEE MTT-S International Microwave Symposium digest · 2007 · 65 citations