IEEE Transactions on Nuclear Science · 1967 · 28 citations · 12 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice ModelingDevice ReliabilityNeutron LifetimeRadiation Damage In MaterialsSemiconductor ReliabilityNeutron Damage EffectsNeutron IrradiationNeutron Irradiation DamageNeutron Irradiation EffectsRecombination ProcessesRecombination ReactionsReduction ProcessesTemperature Dependence Of Radiation Damage
A two level mnodel for recombination processes in neutron irradiated silicon and germanium is proposed. This model successfully explains published experimental data for lifetime and. life-time damage constant as a function of resistivity, injection level and, temperature.
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Statistics of the Recombinations of Holes and Electrons
W. Shockley, W. T. Read · Physical Review · 1952 · 6.4K citations
RADIATION DAMAGE IN SEMICONDUCTORS.
P. Baruch · Defense Technical Information Center (DTIC) · 1963 · 564 citations