Disordered Regions in Semiconductors Bombarded by Fast Neutrons

Abstract

The width and depth of the potential wells surrounding disordered regions in neutron irradiated n-type germanium and extrinsic silicon are estimated. Numerical examples of well dimensions for a wide range of sample characteristics are presented. Some effects of disordered regions, e.g., (a) scattering of conduction electrons, (b) absorption of holes, and (c) polarizability, are discussed.