In-diffusion of nitrogen from N2 ambient and its aggregation at lattice imperfections in silicon crystals

Concentration, Solubility, and Equilibrium Distribution Coefficient of Nitrogen and Oxygen in Semiconductor Silicon

Y. Yatsurugi, Nobu Akiyama, Yoshiyuki Endo et al. · Journal of The Electrochemical Society · 1973 · 272 citations

Natural Sciences, Chemistry, Materials Science +13

Secondary ion mass spectrometry (SIMS VI)

A. Benninghoven, Andreas Huber, H. W. Werner · Analytica Chimica Acta · 1988 · 211 citations

Natural Sciences, Chemistry, Analytical Chemistry +6

Diffusion coefficient of a pair of nitrogen atoms in float-zone silicon

Taizoh Itoh, Takao Abé · Applied Physics Letters · 1988 · 111 citations

Natural Sciences, Materials Engineering, Materials Science +14

Interaction of dislocations with impurities in silicon crystals studied by<i>in situ</i>X-ray topography

Kôji Sumino, Masato Imai · Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties · 1983 · 94 citations

Natural Sciences, Materials Science, Physics +17

Determination of Conversion Factor for Infrared Measurement of Oxygen in Silicon

Toshiaki Iizuka, Shin. Takasu, Michio Tajima et al. · Journal of The Electrochemical Society · 1985 · 80 citations

Natural Sciences, Materials Engineering, Materials Science +17