Microanalysis of single-crystal Si recrystallized using halogen lamps

Abstract

Halogen lamps have been used to recrystallize polycrystalline silicon deposited on SiO2. 〈100〉 single crystals have been obtained. 100–200 μm wide subgrains are present in the recrystallized films. We present the results of a structural analysis of the defects by using essentially Transmission Electron Microscopy. We can classify the defects as follows: primary subgrain boundaries are misfit dislocations resulting from a low angle misorientation between adjacent growing regions. Secondary subgrain boundaries are related to the strain present in the films during the recrystallization. We find coherent and incoherent precipitates. Precipitates result from a segregation of impurities. Some of them are revealed as α-SiC.