Semiconductor Science and Technology · 2007 · 24 citations · 18 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsCarrier TransportP-n JunctionsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesCharge TransportCurrent-voltage RelationshipOpen-circuit VoltageP-n Junction CharacteristicsRecombination ProcessesResistivitySurface ResistivityVacuum Deposition
The Au/n–CdTe Schottky diodes with a high rectification factor (107–108 at |V| = 0.5 V), low reverse current (10−12–10−9 A at V = −1 V) and an open-circuit voltage of 0.75–0.85 V are investigated. Depending on the semiconductor resistivity (102–104 Ω cm at 300 K) and treatment of the surface of a single crystal before the vacuum deposition of Au, the observed current–voltage (I–V) characteristics of diodes exhibit a wide variety of shapes. The obtained experimental data on the charge transport mechanism in Schottky diodes based on both n- and p-type CdTe are summarized taking into account the results reported earlier. The variety of the observed I–V characteristics is explained in the framework of the Sah–Noyce–Shockley theory for generation recombination in the space-charge region of a p–n junction adapted to a Schottky diode.
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