A comprehensive study of SiC growth processes in a VPE reactor

Production of large-area single-crystal wafers of cubic SiC for semiconductor devices

Shigehiro Nishino, J. A. Powell · Applied Physics Letters · 1983 · 926 citations

Engineering, Materials Engineering, Materials Science +17

A Model of Silicon Carbide Chemical Vapor Deposition

Mark D. Allendorf, Robert J. Kee · Journal of The Electrochemical Society · 1991 · 195 citations

Natural Sciences, Chemical Engineering, Materials Science +17

Growth mechanism of 6H-SiC in step-controlled epitaxy

Tsunenobu Kimoto, Hironori Nishino, Woo Sik Yoo et al. · Journal of Applied Physics · 1993 · 161 citations

Natural Sciences, Materials Engineering, Materials Science +17

Atomic force microscopy growth modeling of SiC buffer layers on Si(100) and quality optimization

Gabriel Ferro, Y. Monteil, H. Vincent et al. · Journal of Applied Physics · 1996 · 53 citations

Engineering, Materials Engineering, Materials Science +17

Atomically Flat 3C-SiC Epilayers by Low Pressure Chemical Vapor Deposition

Yuuki Ishida, Tetsuo Takahashi Tetsuo Takahashi, Hajime Okumura et al. · Japanese Journal of Applied Physics · 1997 · 42 citations

Natural Sciences, Materials Engineering, Materials Science +17