Effective Mass Approximation for Acceptor States in Silicon

Abstract

Abstract The effective mass equations for acceptors in silicon have been solved approximately for a large number of excited states. The variational approach used by Schechter was followed, but with more general trial functions that allow the treatment of a larger number of excited states. More recently measured valence band parameters were also used. Energies and wave functions were calculated for all of the lower excited states. Several energy levels were found between the levels treated by Schechter. The energy values obtained from the new valence band parameters do not agree as well with experiment as those obtained with the older parameters. However, the new distribution of levels does yield a better agreement between the theoretical and experimental symmetries of the excited state wave functions.