IEEE Transactions on Microwave Theory and Techniques · 1992 · 18 citations · 6 references
EngineeringElectrical EngineeringAnalog ElectronicsMicroelectronicsMicrowave EngineeringHigh-frequency Semiconductor DevicesLow-noise Circuit DesignMicrowave AmplifiersMicrowave Integrated CircuitsMicrowave Semiconductor DevicesMillimeter-wave CommunicationsConversion GainConversion LossGaas Microwave Integrated CircuitsGaas Monolithic Microwave Integrated CircuitsImage RejectionLow-noise AmplifiersNoise FigureSmall-signal Gain
The design, fabrication, and evaluation of a W-band image-rejection downconverter based on pseudomorphic InGaAs-GaAs HEMT technology are presented. The image-rejection downconverter consists of a monolithic three-stage low-noise amplifier, a monolithic image-rejection mixer, and a hybrid IF 90 degrees coupler with an IF amplifier. The three-stage amplifier has a measured noise figure of 3.5 dB, with an associated small signal gain of 21 dB at 94 GHz while the image-rejection mixer has a measured conversion loss of 11 dB with +10 dBm LO drive at 94.15 GHz. Measured results of the complete image-rejection downconverter including the hybrid IF 90 degrees coupler and a 10 dB gain amplifier show a conversion gain of more than 18 dB and a noise figure of 4.6 dB at 94.45 GHz.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
6
94-GHz 0.1- mu m T-gate low-noise pseudomorphic InGaAs HEMTs
K.L. Tan, R.M. Dia, D.C. Streit et al. · IEEE Electron Device Letters · 1990 · 88 citations
A W-band monolithic downconverter
K.W. Chang, H. Wang, S. Bui et al. · IEEE Transactions on Microwave Theory and Techniques · 1991 · 43 citations
A family of InGaAs/AlGaAs V-band monolithic HEMT LNAs