Marker layers for the development of a multistep GaN FACELO process

Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence

D. Cherns, S. J. Henley, F. A. Ponce · Applied Physics Letters · 2001 · 238 citations

Engineering, Materials Engineering, Materials Science +17

Epitaxial Lateral Overgrowth of GaN

B. Beaumont, P. Venn�gu�s, P. Gibart · physica status solidi (b) · 2001 · 209 citations

Engineering, Materials Engineering, Materials Science +16

Drastic reduction of threading dislocation in GaN regrown on grooved stripe structure

M. Ishida, Makoto Ogawa, Kenji Orita et al. · Journal of Crystal Growth · 2000 · 28 citations

Engineering, Materials Engineering, Materials Science +13