Japanese Journal of Applied Physics · 1984 · 26 citations · 4 references
Selective Growth MaskWide-bandgap SemiconductorElectrical EngineeringSemiconductor TechnologyEngineeringRf SemiconductorNanoelectronicsApplied PhysicsSelectively GrownSemiconductor Device FabricationOptoelectronic DevicesWsi GateMicroelectronicsCompound SemiconductorGate ResistanceSemiconductor Device
A WSi/TiN/Au gate self-aligned GaAs MESFET was formed using MOCVD. The WSi/TiN/Au gate acts as a selective growth mask for the n + -layer. This new process is demonstrated to be effective for reducing the gate resistance and source resistance of FETs simultaneously. The gate resistance, R g , was 3.4 Ω ( L g =1.3 um, W g =30 um) and was reduced one tenth compared to that of the WSi gate. A high-speed MSI and high performance microwave device can be obtained by using the WSi/TiN/Au gate self-aligned GaAs MESFETs.
4
Thermal Noise in Field-Effect Transistors
A. Der Ziel · Proceedings of the IRE · 1962 · 344 citations
Device Modeling, Electrical Engineering, Semiconductor Device +9
Characterization of WSi<i>x</i>/GaAs Schottky contacts
T. Ohnishi, N. Yokoyama, Hidetoshi Onodera et al. · Applied Physics Letters · 1983 · 79 citations
Semiconductors, Materials Engineering, Electrical Engineering +12