Frequency and temperature dependence of the space charge capacitance in a-Si:H films

Measurement of the density of gap states in hydrogenated amorphous silicon by space charge spectroscopy

D. V. Lang, J. David Cohen, J. P. Harbison · Physical review. B, Condensed matter · 1982 · 475 citations

Engineering, Materials Science, Physics +17

Capacitance Energy Level Spectroscopy of Deep-Lying Semiconductor Impurities Using Schottky Barriers

G.I. Roberts, C.R. Crowell · Journal of Applied Physics · 1970 · 161 citations

Engineering, Electrical Engineering, Materials Science +17

An investigation of the amorphous-silicon barrier and p-n junction

W. E. Spear, P. G. Le Comber, A.J. Snell · Philosophical Magazine B · 1978 · 130 citations

Engineering, Materials Science, Physics +17

Interpretation of the conductance and capacitance frequency dependence of hydrogenated amorphous silicon Schottky barrier diodes

Pierre Viktorovitch, Garret Moddel · Journal of Applied Physics · 1980 · 104 citations

Engineering, Materials Science, Physics +17

Capacitance studies on amorphous silicon Schottky barrier diodes

J. Beichler, W. Fuhs, H. Mell et al. · Journal of Non-Crystalline Solids · 1980 · 80 citations

Engineering, Electrical Engineering, Materials Science +14