Inversion Asymmetry in Heterostructures of Zinc-Blende Semiconductors: Interface and External Potential versus Bulk Effects

Abstract

The direct observation of electric-field-induced optical anisotropy in InGaAs-InP quantum wells is reported. The analysis of this effect shows that hitherto neglected heavy- and light-hole couplings at the minizone center due to interface and external potential inversion asymmetries play a much stronger role than the classical bulk inversion asymmetry. The giant electropleochroism previously reported by Kwok et al. is quantitatively explained.