Strong coupling of light with<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>A</mml:mi></mml:math>and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>B</mml:mi></mml:math>excitons in GaN microcavities grown on silicon

Abstract

We present experimental results demonstrating strong-light matter coupling at low and room temperature in bulk GaN microcavities with epitaxial (Al,Ga)N Bragg mirrors grown on silicon (111). At low temperature, the strong coupling of both the $A$ and $B$ excitonic features of GaN with the cavity mode is clearly resolved in the microcavity. At room temperature a Rabi energy of $50\phantom{\rule{0.3em}{0ex}}\mathrm{meV}$ is observed and well reproduced using transfer-matrix reflectivity calculations describing the interaction of both the $A$ and $B$ excitonic states with the photonic mode.