Multi-level logic gate implementation in GaAs ICs using schottky diode-FET logic

R.C. Eden, F. Lee, S.I. Long, B.M. Welch, R. Zucca

1980 · 17 citations · 5 references

Concepts

Abstract

An extension of the Schottky diode-FET logic circuit approach for ultra high-speed, low-power planar GaAs digital ICs to configurations allowing up to three levels of logic to be performed in one gate, will be reported.

References

5